| 简介 |
PROBLEM TO BE SOLVED : To provide a magnetic semiconductor element having a large coercive force.
SOLUTION : A magnetic semiconductor element 11 comprises : a semiconductor region 13 composed of a hexagonal group III nitride semiconductor; and a first laminate structure 15 which includes first group III nitride semiconductor layers 17 and second group III nitride semiconductor layers 19 and which is provided on a principal surface 13a of the semiconductor region 13. The principal surface 13a is inclined with respect to a c-plane of the group III nitride semiconductor in the semiconductor region 13 at an angle of five degrees and over; and the first group III nitride semiconductor layer 17 contains a first metal magnetic element which is at least either of transition metal or rare earth metal. In the first laminate structure 15, the number of the first group III nitride semiconductor layers 17 is 2 or more, and the number of the second group III nitride semiconductor layers 19 is 1 or more, and the first group III nitride semiconductor layers 17 and the second group III nitride semiconductor layers 19 are alternately laminated one by one.
SELECTED DRAWING : Figure 1
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