| 申请日期 | 2025-08-15 | 申请号 | US13871770 |
| 公开（公告）号 | US20160172565A9 | 公开（公告）日 | 2016-06-16 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | California Institute of Technology | ||
| 简介 | The present invention teaches a successful synthesis regime to grow highly oriented plate-like In2Te3 nanostructures inside bulk thermoelectric Bi2Te3 using a thermodynamically driven nucleation and growth technique. As described herein, the inventive materials can further be doped with +2 and +4 rare earth elements, and others, in order to achieve the desired performance characteristics. | ||
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