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SILICON NITRIDE WEAR RESISTANT MEMBER AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED COMPACT 发明申请

2023-01-05 3530 224K 0

专利信息

申请日期 2025-07-12 申请号 US14896775
公开(公告)号 US20160137556A1 公开(公告)日 2016-05-19
公开国别 US 申请人省市代码 全国
申请人 KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO LTD
简介 The present invention provides a silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. Due to above structure, there can be provided a wear resistant member comprising the silicon nitride sintered compact having an excellent wear resistance and processability.


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