| 申请日期 | 2026-03-30 | 申请号 | JP2015184746 |
| 公开（公告）号 | JP2016066795A | 公开（公告）日 | 2016-04-28 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | NATIONAL INSTITUTE FOR MATERIALS SCIENCE | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a skutterudite thermoelectric conversion semiconductor which has a good thermoelectric performance even in the case of not using a rare earth, Ba or the like which is questionable in terms of stable supply or oxidation resistance.
SOLUTION : The above objective is achieved by a Si- and Te-doped skutterudite thermoelectric semiconductor having the following composition : CoSb3-x-ySixTey (where 0.003 | ||
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