| 简介 |
A thin film transistor (TFT), comprising : a gate electrode (170), an active layer (SL), a gate insulating layer (160) located between the gate electrode (170) and the active layer (SL), and a source electrode (181) and a drain electrode (182) that are electrically connected to the active layer (SL). The active layer (SL) comprises a channel layer (CL) and at least one channel protection layer (PL1; PL2), which are arranged in an overlapping manner in a stacking direction, and the material of each of the channel layer (CL) and the at least one channel protection layer (PL1; PL2) is a metal oxide semiconductor material. The at least one channel protection layer (PL1; PL2) is a crystal layer, and metal elements of the at least one channel protection layer (PL1; PL2) comprise non-rare-earth metal elements, and the non-rare-earth metal elements comprise In, Ga, Zn and Sn. In this way, defects of the channel layer can be effectively reduced, thereby effectively improving the overall stability of the thin film transistor. |
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