| 申请日期 | 2025-07-15 | 申请号 | US13884371 |
| 公开（公告）号 | US9322111B2 | 公开（公告）日 | 2016-04-26 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Shuuji Oosumi; Yasutaka Nomi; Nobuo Nakamura; Hiroshi Hatanaka; Tomio Kajigaya | ||
| 简介 | A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0 | ||
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