| 申请日期 | 2025-07-09 | 申请号 | JP2012085054 |
| 公开（公告）号 | JP5900117B2 | 公开（公告）日 | 2016-04-06 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | JSR Corporation4178 | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a photoresist composition excellent in sensitivity and resolution and sufficiently suppressing the nano edge roughness of film surface of an obtained pattern, and a resist pattern formation method using the photoresist composition.SOLUTION : A photoresist composition contains [A] a polymer having a structural unit (I) expressed by formula (1), and [B] an acid generator. In the formula (1), it is preferable that Rand Rare not bonded to each other. | ||
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