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Compound semiconductors and manufacturing method thereof 发明申请

2023-12-18 1980 321K 0

专利信息

申请日期 2025-06-27 申请号 KR1020150136402
公开(公告)号 KR1020160037799A 公开(公告)日 2016-04-06
公开国别 KR 申请人省市代码 全国
申请人 LG CHEM LTD
简介 The present invention discloses a compound semiconductor having excellent thermoelectric conversion performance, and a utilizing method thereof. According to the present invention, the compound semiconductor can be stated as the following chemical formula 1. M1_aCo_4SB_(12-x)M2_x In the chemical formula 1, M1 and M2 refer to at least one between indium (In) and a rare-earth element, and satisfy the following : 0(AA) Comparative example(BB) Example 1(CC) Example 2(DD) Example 3(EE) Example 4(FF) Example 5COPYRIGHT KIPO 2016


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