| 简介 |
This invention provides a method and a system to deposit a thin layer of very reactive elemental metals by plasma enhanced atomic layer deposition (PEALD). The very reactive metals, selected from the highly electropositive elements include alkaline earth metals, group III metals, and some transition and rare earth metals. The thin metal layers are formed by sequentially pulsing one of above mentioned metal containing organometallic precursors and a hydrogen plasma as a reducing agent into a reaction chamber containing a substrate surface with pulsed or continuous flow of an inert purge gas between each pulsing step. A robust high vacuum reactor chamber equipped with an anti-corrosion turbo pump and a high vacuum load lock are required for reducing contaminant gases such as O2, H2O, and CO2, and for increasing hydrogen plasma efficiency. |
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