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BACKSIDE ILLUMINATION PROCESS 发明授权

2023-10-14 3330 469K 0

专利信息

申请日期 2026-03-23 申请号 KR1020140124811
公开(公告)号 KR101604695B1 公开(公告)日 2016-03-14
公开国别 KR 申请人省市代码 全国
申请人 KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
简介 The present invention relates to a method for protecting a micro pattern and depositing a metal layer using backside illumination technology which deposits a photoresist metal layer as protecting a previously formed pattern without an alignment error by not using an optical device mask for an additional process under the state that the pattern is formed on a transparent substrate and a metal layer, and also can facilitate a precise post processing by facilitating to perform the post processing in order to achieve coincidence with the prior pattern hole in performing additional etching as to the pattern processed on the transparent substrate already. The characteristics of the present invention includes : an etching step of forming the pattern hole on the metal layer or the transparent substrate by etching the metal layer and the transparent substrate using a photoresist including a fixed pattern as to the metal layer formed on the transparent substrate, or forming the pattern hole on the metal layer by etching the metal layer; a backside illumination preparation step of coating a photosensitive material on an upper part of the metal layer and the pattern hole forming the fixed pattern by etching; and a backside illumination step of removing a part of the photosensitive material by performing backside illumination on the transparent substrate. The photosensitive material is formed with a positive photoresist, and the method includes an additional etching step of removing the photosensitive material of the pattern hole by the backside illumination step, and etching the transparent substrate of the pattern hole part where the photosensitive material is removed after the backside illumination step.(AA) Using positive PRCOPYRIGHT KIPO 2016


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