客服热线:18202992950

High temperature superconducting thin oxide film on a crystal defect of nano-scale method for introd 发明授权

2023-10-31 3160 1360K 0

专利信息

申请日期 2025-06-24 申请号 JP2012051518
公开(公告)号 JP5881107B2 公开(公告)日 2016-03-09
公开国别 JP 申请人省市代码 全国
申请人 National Research and Development Institute of Advanced Industrial Science and Technology301021533
简介 PROBLEM TO BE SOLVED : To provide a simple method for introducing a controlled crystal defect in a (RE)BCO thin film.SOLUTION : On top of a high temperature superconducting oxide thin film, deposited on a substrate, which consists primarily of a rare earth oxide expressed by a general formula (RE)BaCuO(where, RE represents one kind of atom selected from Y, Nd, Sm, Eu, Gd, Dy, Ho, Er and Yb) is placed a porous alumina self-supporting film. And, by using the alumina film as a mask, argon ion milling is applied, whereby a nano-scale crystal defect is introduced into the high temperature superconducting oxide thin film.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4