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R-T-B-BASED pERMANENT MAGNET 发明授权

2023-06-01 3950 938K 0

专利信息

申请日期 2025-06-24 申请号 DE102014105784
公开(公告)号 DE102014105784B4 公开(公告)日 2016-02-18
公开国别 DE 申请人省市代码 全国
申请人 TDK Corporation
简介 The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystallizing layer and (Y, La)-T-B based crystallizing layer can be formed by alternatively stacking R1-T-B and (Y, La)-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystallizing layer can be maintained while an improved temperature coefficient of the (Y, La)-T-B based crystallizing layer can be obtained. Further, the lattice distortion in the total stacked structure is moderated by setting the rare earth elements in the (Y, La)-T-B based crystallizing layer as both of Y and La, and a high residual flux density can be obtained accordingly.


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