| 简介 |
PROBLEM TO BE SOLVED : To provide a bonding wire having high thermal shock resistance in a resin mold semiconductor package.
SOLUTION : A bonding wire W contains one or more kinds of elements which are selected from Pd and Au and have the total amount ranging from not less than 1.0 mass% to not more than 4.0 mass%, one or more kinds of elements which are selected from Ca and rare earth element and have the total amount ranging from not less than 20 mass ppm to not more than 500 mass ppm, one or more kinds of elements which are selected from Ge, Bi, Mg and Cu and have the total amount ranging from not less than 20 mass ppm to not more than 500 mass ppm, and the residual of Ag and unavoidable impurities. The tension strength at the normal temperature of the wire ranges from 176.6 to 245.3 N/mm2, and the neck strength of first bonding portion of the wire is not less than 137.3 N/mm2. Accordingly, the wire is excellent in continuous bonding performance, thermal shock resistance, estimation of chip flaw just below first bonding portion, electrical resistance, estimation of wire flow under resin sealing and sulfur resistance of the wire.
SELECTED DRAWING : Figure 1
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