| 简介 |
The present invention relates to a magnetic junction used in a magnetic device, and a method for providing the magnetic junction. The magnetic junction includes : a free layer, a pinned layer, and a nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between a plurality of stable magnetic states when a write current is applied to the magnetic junction. Each of the free and pinned layers has perpendicular magnetic anisotropy energy greater than out-of-plane demagnetization energy. At least one of the pinned and free layers includes a multilayer which includes at least one bilayer. Each of the bilayers has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least 400° C.(106) Selective capping layer(s)(108) Upper contact(110) Free layer selectively including a multilayer having high PMA and thermal resistance(120) NM spacer layer(130) Pinned layer selectively including a multilayer having high PMA and thermal resistance(104) Selective seed layer(s)(102) Lower contact(101) SubstrateCOPYRIGHT KIPO 2016 |
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