| 申请日期 | 2025-07-11 | 申请号 | US13939721 |
| 公开（公告）号 | US9236249B2 | 公开（公告）日 | 2016-01-12 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Rytis Dargis; Robin Smith; Andrew Clark; Erdem Arkun; Michael Lebby | ||
| 简介 | A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride. | ||
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