| 简介 |
The present invention relates to a multilayer structure applicable to a resistive switching memory having a crossbar array structure, a resistive switching memory having an intermediate layer of the multilayer structure, and a method for manufacturing the multilayer structure. The present invention is a multilayer structure applicable to a resistive switching memory having a crossbar array structure including an upper electrode, an intermediate layer and a lower electrode. The intermediate layer is a perovskite structure which has a multilayer thin film structure formed by successively stacking a p-type layer, an n-type layer, and a p-type layer. Also, the p-type layer is made of a R_1-xA_x MnO_3 material (R is trivalence rare-earth metal, A is divalence positive alkaline metal, 0 < x < 0.5). The n-type layer is made of AMnO_3 material (A is divalence positive alkaline metal, 0 < y < 1). |
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