| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing semiconductor optical device including a diffraction grating with improved uniformity of depth.
SOLUTION : In a method M1 for manufacturing a semiconductor optical device, a diffraction grating formation layer 12 comprising a III-V group compound semiconductor containing indium as a group III structural element is formed; and a mask 13 for forming a diffraction grating is formed on the diffraction grating formation layer 12. Then a substrate 10 having the diffraction grating formation layer 12 is disposed on a surface of a substrate support bed 33 where a temperature can be set in an ICP-RIE (inductive coupled plasma-reactive ion etching) device 30. In the ICP-RIE device 30, the diffraction grating formation layer 12 is exposed to rare gas plasma generated by discharge to increase the temperature of the diffraction grating formation layer 12. By stopping generation of the rare gas plasma and supplying a halogen gas to the ICP-RIE device 30, the diffraction grating formation layer 12 is exposed to an etchant generated from the halogen gas to form a diffraction grating.
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