| 简介 |
PROBLEM TO BE SOLVED : To impart stable electric characteristics to a semiconductor device using an oxide semiconductor to achieve higher reliability.
SOLUTION : A manufacturing process for a transistor including an oxide semiconductor film includes : an implantation step of implanting rare gas ions into at least the oxide semiconductor film; and a heating step of heating the oxide semiconductor film with the rare gas ions implanted, under reduced pressure, under a nitrogen atmosphere, or under a rare gas atmosphere. Thus, hydrogen or water contained in the oxide semiconductor film with the rare gas ions implanted is released, thereby purifying the oxide semiconductor film.
COPYRIGHT : (C)2016, JPO&INPIT |
客服热线：
手机版
二维码
