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Method for the preparation of rare earth element doped with different amounts of dopant with piezoel 发明申请

2023-10-10 1820 4203K 0

专利信息

申请日期 2026-03-10 申请号 DE102015107569
公开(公告)号 DE102015107569A1 公开(公告)日 2015-11-19
公开国别 DE 申请人省市代码 全国
申请人 Avago Technologies General IP Pte Ltd
简介 A process for the preparation of a doped with rare earth element piezoelectric material, comprising a first component, a second component and the rare earth element. The method comprising the following : providing a substrate; initial flow of hydrogen over the substrate; after the initial flow of the hydrogen over the substrate, to form the streams of the first component over a surface of a single target piezoelectric material doped with rare earth element, wherein the target comprises the rare earth element in a particular atomic percent; and sputtering the doped from the target to the substrate with rare earth element piezoelectric material.


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