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METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE 发明申请

2023-09-08 1360 1315K 0

专利信息

申请日期 2026-03-08 申请号 JP2015072347
公开(公告)号 JP2015199657A 公开(公告)日 2015-11-12
公开国别 JP 申请人省市代码 全国
申请人 JAPAN FINE CERAMICS CO LTD; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
简介 PROBLEM TO BE SOLVED : To provide a method for producing a silicon nitride substrate, in which the dense silicon nitride substrate can be produced from a powdery starting material containing silicon powder and it is unnecessary to remove an alternation layer from a formed sintered molded article thereof. SOLUTION : The method for producing the silicon nitride substrate comprises : a powdery starting material preparation step of using the powdery starting material containing silicon powder, 1-7 mol% of rare earth element compounds in terms of oxides thereof and 8-15 mol% of magnesium compounds in terms of oxides thereof when the silicon in the powdery starting material is converted into silicon nitride; a sheet molding step of molding the powdery starting material into a sheet-like shape to obtain a sheet body; a nitridation step of heating the sheet body under a nitrogen atmosphere at 1, 200-1, 500°C to nitride the silicon contained in the sheet body; and a sintering step of sintering the sheet body containing nitrided silicon under the nitrogen atmosphere. COPYRIGHT : (C)2016, JPO&INPIT


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