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ION ASSISTED DEPOSITION FOR RARE-EARTH OXIDE BASED COATINGS ON LIDS AND NOZZLES 发明申请

2022-12-28 3990 1576K 0

专利信息

申请日期 2025-06-27 申请号 JP2021130529
公开(公告)号 JP2021185267A 公开(公告)日 2021-12-09
公开国别 JP 申请人省市代码 全国
申请人 APPLIED MATERIALS INCORPORATED
简介 To provide an article (such as a lid and/or nozzle) for an etch reactor having a thin film protective layer on one or more plasma facing surfaces of the article.SOLUTION : A method of manufacturing an article comprises the step for providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, where the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less.SELECTED DRAWING : Figure 6


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