| 申请日期 | 2025-06-28 | 申请号 | US14262785 |
| 公开（公告）号 | US20150311046A1 | 公开（公告）日 | 2015-10-29 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Avago Technologies General IP (Singapore) Pte Ltd | ||
| 简介 | A plasma vapor deposition (PVD) system and method for depositing a piezoelectric layer over a substrate are disclosed. A plasma is created in a reaction chamber creates from the sputtering gas supplied to the reaction chamber. The plasma sputters atoms from the sputtering target, which are deposited on the substrate for forming the thin film of the material. | ||
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