| 申请日期 | 2025-07-07 | 申请号 | KR1020200175642 |
| 公开（公告）号 | KR1020210148828A | 公开（公告）日 | 2021-12-08 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | TAIWAN SEMICONDUCTOR MFG CO LTD | ||
| 简介 | A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising : a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line. | ||
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