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Manganese oxide thin film and oxide laminate 发明授权

2023-04-14 1200 1382K 0

专利信息

申请日期 2025-09-18 申请号 US14365442
公开(公告)号 US9166148B2 公开(公告)日 2015-10-20
公开国别 US 申请人省市代码 全国
申请人 FUJI ELECTRIC CO LTD
简介 A manganese oxide thin film is formed on a plane of a substrate and has a composition RMnO3, where R is at least one and preferably two trivalent rare earth elements selected from lanthanoids, and where both R and Mn form the same atomic layer parallel to the plane of the substrate. An oxide laminate, includes the manganese oxide thin film; and at least one strongly-correlated oxide thin film that is contiguous to the manganese oxide thin film, wherein a total thickness, t, of the oxide laminate, a thickness, tm, of the manganese oxide thin film, and a thickness, t1, of the strongly-correlated oxide thin film satisfy a relation, relative to a critical thickness, tc, by which the strongly-correlated oxide thin film has a metallic phase, as follows : t=tm+t1>tc and t1


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