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METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE 发明申请

2023-12-16 4470 1922K 0

专利信息

申请日期 2025-06-28 申请号 WOJP15060252
公开(公告)号 WO2015152292A1 公开(公告)日 2015-10-08
公开国别 WO 申请人省市代码 全国
申请人 JAPAN FINE CERAMICS CO LTD
简介 Provided is a method for producing a silicon nitride substrate, said method comprising : a raw material powder preparation step of preparing a raw material powder containing a silicon powder, a rare earth element compound and a magnesium compound, wherein, when the amount of silicon in the raw material powder is expressed in terms of a silicon nitride content, the raw material powder contains the rare earth element compound in an amount of 1 to 7 mol% inclusive in terms of an oxide content and also contains the magnesium compound in an amount of 8 to 15 mol% inclusive in terms of an oxide content; a sheet molding step of molding the raw material powder into a sheet-like shape to form a sheet-like article; a nitriding step of heating the sheet-like article in a nitrogen atmosphere at 1200 to 1500°C inclusive to nitride silicon contained in the sheet-like article; and a sintering step of sintering the sheet-like article, which has been undergone the nitriding step, under a nitrogen atmosphere.


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