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FOTOPEREKLYuChAEMYI AND ELEKTROPEREKLYuChAEMYI ORGANIC FIELD-EFFECT TRANSISTOR, ITS MANUFACTURING M 发明申请

2023-03-14 2120 234K 0

专利信息

申请日期 2025-09-13 申请号 RU2014111100
公开(公告)号 RU2014111100A 公开(公告)日 2015-09-27
公开国别 RU 申请人省市代码 全国
申请人 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской академии наук (ИПХФ РАН)
简介 FIELD : electronics.SUBSTANCE : invention relates to organic electronics, specifically to memory devices based on organic field effect transistors fabricated using photochromic compounds as part of active layer disposed at boundary between layer of semiconductor material and insulator. Invention provides formation and use of photo-switchable and electrically switchable organic field effect transistors, having in their structure a layer of photochromic molecules located on boundary between layer of semiconductor material and an insulator.EFFECT : technical results achieved in implementation of claimed invention are a simple structure and technology of manufacturing photo-switchable and electrically switchable field effect transistors; possibility of creating multiple discrete states with different threshold voltages; achieving significant differences in currents Ifor different states (up to 10, 000 times); providing spectral sensitivity of device : impact of light pulses of different wavelengths converts transistor in different states; enabling use of photo-switchable and electrically switchable FET as multibit memory cell; enabling optical and electrical programming of said memory cells; higher information recording density by implementing multibit mode.4 cl, 10 dwg


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