| 申请日期 | 2025-06-27 | 申请号 | US13662460 |
| 公开（公告）号 | US9136819B2 | 公开（公告）日 | 2015-09-15 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Avago Technologies General IP (Singapore) Pte Ltd | ||
| 简介 | A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer. | ||
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