| 简介 |
PROBLEM TO BE SOLVED : To provide a flattening method and a flattening device of a Si substrate, in which, an abrasive material or abrasive grains including rare earth are not used at all, a solution difficult in handling hydrogen fluoride or the like therein and large in environmental load is not used at all, compatibility with a clean room is improved and the Si substrate can be flattened at a processing speed equal to CMP and further so as to obtain a surface of higher definition than a CMP finished surface.
SOLUTION : A catalyst substance promoting both oxidization of Si and hydrolysis of an Si oxide film is used as a processing reference plane and under the presence of water, the Si substrate is brought into contact with the processing reference plane by a predetermined pressure. The Si substrate and the processing reference plane are relatively moved, and removal of a decomposition product caused by the oxidization of an Si surface and the preferential hydrolysis from protrusions on the oxide film is promoted by a catalyst function that the processing reference plane has. Thus, the surface of the Si substrate is flattened with precision of a processing speed ranging from 10 nm/h to 10 μm/h and a surface roughness being equal to or lower than 0.2 nm in RMS, without using any abrasive grains or abrasive material.
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