| 简介 |
A process chamber is provided. A target comprising an alloy with a base metal atomic species and an alloy atomic species is placed in the process chamber. The concentration of the alloy atomic species is subject to a manufacturing variation. A substrate is placed in the process chamber. While supplying gases comprising of a noble gas from a first atomic species and a noble gas from a second atomic species, different from the first atomic species, to the process chamber, a sputtering operation transfers the target material from the target to the substrate to form a piezoelectric film. A relative flow rate is set between the noble gas of the first atomic species and the noble gas of the second atomic species to form the film with a predetermined piezoelectric coefficient notwithstanding the manufacturing variation.(32) Pulse-type DC source(34) RF source(36) Matching networkCOPYRIGHT KIPO 2015 |
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