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BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER 发明申请

2023-05-23 2410 426K 0

专利信息

申请日期 2025-06-30 申请号 KR1020150028395
公开(公告)号 KR1020150101959A 公开(公告)日 2015-09-04
公开国别 KR 申请人省市代码 全国
申请人 AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE LTD
简介 In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises : a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, wherein the piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. As for a particular acoustic coupling coefficient (kt^2) value and a series resonance frequency (F_s) of the BAW resonator, the first electrode thickness and the second electrode thickness are respectively greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer.COPYRIGHT KIPO 2015


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