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BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER 发明申请

2023-11-18 4500 206K 0

专利信息

申请日期 2026-04-26 申请号 US14191771
公开(公告)号 US20150244347A1 公开(公告)日 2015-08-27
公开国别 US 申请人省市代码 全国
申请人 Avago Technologies General IP (Singapore) Pte Ltd
简介 In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises : a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer.


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