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The protective film material and resist pattern forming method 发明授权

2023-06-07 2600 1316K 0

专利信息

申请日期 2025-08-14 申请号 JP2012208245
公开(公告)号 JP5768788B2 公开(公告)日 2015-08-26
公开国别 JP 申请人省市代码 全国
申请人 Shin Etsu Chemical Co Ltd2060
简介 PROBLEM TO BE SOLVED : To provide a resist protective film material which can prevent formation of a T-shape profile in a resist pattern due to amine contamination in air and which has a sensitizing effect on a resist film and thereby can improve the sensitivity of the resist film.SOLUTION : The resist protective film material comprises a polymeric compound, as a base resin, having a repeating unit derived from a substituted or unsubstituted styrene boronic acid expressed by formula (1). In the formula, Rrepresents H, an alkyl group or a halogen atom; Rand Rrepresent H, an alkyl group or an aralkyl group, or Rand Rmay be bonded to form a ring together with -O-B-O-, and in the ring, Rand Rare an alkylene group, an alkenylene group or an aralkylene group which may have an ether group, a thiol group or a hydroxy group; and p satisfies 0


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