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The method for producing the thin film sputtering target and permanent magnet 发明授权

2023-07-31 1720 513K 0

专利信息

申请日期 2025-06-24 申请号 JP2011074052
公开(公告)号 JP5769059B2 公开(公告)日 2015-08-26
公开国别 JP 申请人省市代码 全国
申请人 Hitachi Metals Ltd5083
简介 PROBLEM TO BE SOLVED : To provide a sputtering target for a permanent magnet thin film which can improve the magnetic properties of a permanent magnet thin film such as an Nd-Fe-B based permanent magnet thin film, and a method for producing the same. SOLUTION : The sputtering target is composed of a sintered compact represented by a compositional formula in atomic ratio of RxT100-x-yMy(R denotes at least one kind among rare earth elements, wherein Nd and/or Pr is necessarily included; T denotes at least one kind among transition elements, wherein Fe is necessarily included; and M denotes B or B and C, wherein 50 atomic%≤B/M is satisfied), and in which x and y satisfy 17≤x≤20, and 7≤y≤10, and having an oxygen content of ≤1, 500 ppm. COPYRIGHT : (C)2013, JPO&INPIT


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