| 简介 |
It is an object to provide a method for forming a crystalline semiconductor film in which a transition layer is not formed or which includes a thinner transition layer than that in a crystalline semiconductor film which is formed by conventional method, and a method for manufacturing a thin film transistor to which the above method is applied. A semiconductor film including hydrogen is formed over a substrate or over an insulating film formed over a substrate. The semiconductor film including hydrogen undergoes surface wave plasma treatment, which is performed in a gas including hydrogen and/or a rare gas, to generate a crystal nucleus in the semiconductor film including hydrogen. The crystal nucleus is grown to form a crystalline semiconductor film by employing a plasma CVD method. |
客服热线：
手机版
二维码
