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The oxide and manganese oxide thin film laminate 发明申请

2023-06-28 1420 185K 0

专利信息

申请日期 2025-06-25 申请号 JP2014505970
公开(公告)号 JPWO2013140677A1 公开(公告)日 2015-08-03
公开国别 JP 申请人省市代码 全国
申请人 HITACHI MAXELL
简介 Provided is a thin film or a laminate, which undergoes phase transition through mott transition at room temperature to exhibit a switching function. In one embodiment of the present invention, a perovskite-type manganese oxide thin film (2) formed on a surface of a substrate (1) having a (110) plane orientation or a (210) plane orientation is provided. The manganese oxide thin film has a compositional formula Ln1-xAexMnO3 (wherein Ln represents at least one trivalent rare earth element selected from lanthanoid elements; and Ae represents at least one alkali earth element selected from the group consisting of Ca, Sr and Ba), wherein 0 < x <= 1/18 in the compositional formula.


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