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Sintered silicon nitride and circuit board and electronic device using the same 发明授权

2023-03-27 3980 387K 0

专利信息

申请日期 2025-06-27 申请号 JP2011214810
公开(公告)号 JP5743830B2 公开(公告)日 2015-07-01
公开国别 JP 申请人省市代码 全国
申请人 Kyocera Corporation6633
简介 PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact which has high dielectric strength and a superior heat-dissipating property and mechanical property, a circuit board using this and an electronic device.SOLUTION : The silicon nitride sintered compact includes silicon nitride as the principal component, and includes magnesium, a rare-earth metal, aluminum and boron, in terms of oxide, respectively, ≥2 to ≤6 mass%, ≥12 to ≥16 mass%, ≤0.1 to ≥0.5 mass% and ≥0.06 to ≤0.32 mass%, and is composed of β-SiNas the main crystal phase and the grain boundary phase containing a component whose composition formula is expressed as RESiNO(RE is a rare-earth metal), wherein the ratio of the first peak intensity Iof RESiNOat the diffraction angle 30°-35° to the first peak intensity Iof β-SiNat the diffraction angle 27°-28° (I/I) obtained by an X-ray diffraction method is 20% or less (excluding 0%).


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