| 简介 |
PROBLEM TO BE SOLVED : To provide a method for improving the verticality of a hole formed in a multilayered film in manufacturing of semiconductor devices, a device having a three-dimensional structure.
SOLUTION : A method for manufacturing a semiconductor device, in which a multilayered film including first and second films different from each other in dielectric constant and layered alternately is etched through a mask in a process chamber of a plasma processing apparatus, comprises repeatedly executing a sequence of the following steps : (a)a step ST11 in which a first gas including O2 gas or N2 gas and inert gas is supplied into the process chamber, followed by exciting the first gas; (b)a step ST12 in which a second gas including fluorocarbon gas or fluorohydrocarbon gas is supplied into the process chamber, followed by exciting the second gas; and (c)a step ST13 in which a third gas including HBr gas, fluorine-containing gas, and fluorocarbon gas or fluorohydrocarbon gas is supplied into the process chamber, followed by exciting the third gas.
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