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Orienting the perovskite oxide thin film 发明授权

2023-07-21 3970 1427K 0

专利信息

申请日期 2025-07-10 申请号 JP2010274161
公开(公告)号 JP5740645B2 公开(公告)日 2015-06-24
公开国别 JP 申请人省市代码 全国
申请人 National Research and Development Institute of Advanced Industrial Science and Technology301021533
简介 A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(Bn−1MnO3n+1) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.


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