| 简介 |
一种场效电晶体，包含：一基板；一钝化层；一闸极绝缘层，形成於该基板与该钝化层之间；一源极及一汲极，形成与该闸极绝缘层接触；一半导体层，其至少在该源极及该汲极之间形成，且与该闸极绝缘层、该源极、及该汲极接触；以及一闸极，其与该闸极绝缘层接触，且隔着该闸极绝缘层面对该半导体层，其中该钝化层含有一第一钝化层及一第二钝化层，该第一钝化层含有第一复合金属氧化物，该第一复合金属氧化物含有矽以及硷土金属，该第二钝化层形成与该第一钝化层接触，且含有第二复合金属氧化物，该第二复合金属氧化物含有硷土金属以及稀土元素。 A field-effect transistor, including : a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element. |
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