| 简介 |
PROBLEM TO BE SOLVED : To provide a heat treatment method by which occurrence of slip dislocation can be suppressed.
SOLUTION : According to a heat treatment method in which each of multiple semiconductor wafers is mounted horizontally on an SiC-coated support member and subjected to high-temperature heat treatment in a vertical heat treatment furnace, the support member and the heat treatment condition are switched over in such a way that, after the support member is subsequently used for a certain period in either first condition high-temperature treatment or second condition high-temperature treatment, the support member is subsequently used for a certain period in the another condition high temperature treatment, for the heat treatment of the semiconductor wafers. The high-temperature heat treatment of the first condition is conducted in an atmosphere of 1, 000°C or higher in temperature containing rare gas but not oxygen, and the high-temperature heat treatment of the second condition is conducted in an atmosphere of 1, 000°C or higher in temperature containing oxygen but not rare gas.
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