| 申请日期 | 2025-06-25 | 申请号 | TW103124575 |
| 公开（公告）号 | TW201519351A | 公开（公告）日 | 2015-05-16 |
| 公开国别 | TW | 申请人省市代码 | 全国 |
| 申请人 | 应用材料股份有限公司 | ||
| 简介 | A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of less than 6 micro-inches. | ||
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