Boron carbide based transition-metal doped with rare thermoelectric semiconductor, its manufacturin 发明授权

2023-05-03 1700 312K 0

申请日期	2026-01-14	申请号	JP2010122311
公开（公告）号	JP5713283B2	公开（公告）日	2015-05-07
公开国别	JP	申请人省市代码	全国
申请人	National Institute for Materials Science301023238
简介	PROBLEM TO BE SOLVED : To provide an n-type thermoelectric semiconductor consisting of a rare earth boron carbide and exhibiting high performance, e.g. a high Seebeck coefficient.SOLUTION : The trigonal rare earth boron carbide has a composition expressed by a following formula. REBCN*t(TM)(-10

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