| 申请日期 | 2025-07-10 | 申请号 | JP2010122311 |
| 公开（公告）号 | JP5713283B2 | 公开（公告）日 | 2015-05-07 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | National Institute for Materials Science301023238 | ||
| 简介 | PROBLEM TO BE SOLVED : To provide an n-type thermoelectric semiconductor consisting of a rare earth boron carbide and exhibiting high performance, e.g. a high Seebeck coefficient.SOLUTION : The trigonal rare earth boron carbide has a composition expressed by a following formula. REBCN*t(TM)(-10 | ||
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