| 简介 |
PURPOSE : A method for making quantum dots is provided to create quantum dots regardless of the lattice constant difference between a first thin film and a semiconductor substrate. CONSTITUTION : An epitaxial layer(20) is formed on a semiconductor substrate(10). A strain(25) is formed by the difference of crystalline structure between the epitaxial layer and the semiconductor substrate. A first thin film(30) whose lattice constant is different from the epitaxial layer is formed on the epitaxial layer. Voids(40) are created by doping rare earth element or IV-element in the first thin film. Quantum dots(50) are formed around the voids by heat-treating the first thin film. |
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