| 简介 |
The present disclosure provides GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may comprise : a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluoresent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such a LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce the production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, pattering the substrate and then laterally growing a GaN based epitaxial structure. |
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