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A manufacturing method of a semiconductor junction element. 发明授权

2023-12-07 3980 81K 0

专利信息

申请日期 2025-08-13 申请号 JP2012534982
公开(公告)号 JP5651184B2 公开(公告)日 2015-01-07
公开国别 JP 申请人省市代码 全国
申请人 Hitachi Ltd5108
简介 In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal.


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