申请日期 | 2025-06-25 | 申请号 | JP2012537437 |
公开(公告)号 | JP5647256B2 | 公开(公告)日 | 2014-12-24 |
公开国别 | JP | 申请人省市代码 | 全国 |
申请人 | Centre de la Rusherushu Suiantifiku Nasuionaru506369944 | ||
简介 | A method is provided for preparing solid or thin-film single-crystals of cubic sesquioxides (space group no. 206, Ia-3) of scandium, yttrium or rare earth elements doped with lanthanide ions with valence +III, using a high-temperature flux growth technique, and to the various uses of the single-crystals obtained according to said method, in particular in the field of optics. |
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