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Method of collecting gallium from ITGO target 发明授权

2023-10-10 2990 358K 0

专利信息

申请日期 2025-08-19 申请号 KR1020140045231
公开(公告)号 KR101476168B1 公开(公告)日 2014-12-18
公开国别 KR 申请人省市代码 全国
申请人 TSM CO LTD
简介 The present invention relates to a method of collecting gallium from an indium tin gallium oxide target which includes : a) a stage of putting the indium tin gallium oxide target into an acid solution, thereby producing a leached solution; b) a stage of further putting indium into the leached solution such that tin is replaced with indium, thereby collecting tin; c) a stage of putting a pH control agent into the leached solution of the stage (b), thereby collecting indium-gallium hydroxide, and separating the leached solution and precipitate; d) a stage of leaching the indium-gallium hydroxide by an alkaline solution, thereby separating an electrolyte and indium hydroxide, and e) a stage of performing electroextraction on the electrolyte, thereby separating gallium metal from the electrolyte. The method of collecting gallium from an indium tin gallium oxide target according to the present invention can effectively extract only gallium from ITGO contained in solar cell and OLED waste, and thus can significantly increase the circulation rate of gallium which is a rare metal. Also, the collected gallium is purity of 99.9% or higher, and thus can be used to manufacture high-purity gallium products. Also, since ITGO targets to be discarded are used as raw materials, the above described method is eco-friendly and has an advantage of being capable of recycling rare resources.(DD) Collect electrolyte.(EE) Gallium.(FF) Retrieve tin(GG) Retrieve indium.(CC) Introduce a pH control agent.(BB) Introduce indium(AA) Prepare a leach solution.COPYRIGHT KIPO 2015


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