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BULK ACOUSTIC WAVE RESONATOR HAVING PIEZOELECTRIC LAYER WITH VARYING AMOUNTS OF DOPANT 发明申请

2023-02-18 1910 1068K 0

专利信息

申请日期 2025-07-07 申请号 US13906873
公开(公告)号 US20140354109A1 公开(公告)日 2014-12-04
公开国别 US 申请人省市代码 全国
申请人 Avago Technologies General IP (Singapore) Pte Ltd
简介 A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the piezoelectric layer. The piezoelectric layer includes undoped piezoelectric material and doped piezoelectric material, where the doped piezoelectric material is doped with at least one rare earth element, for improving piezoelectric properties of the piezoelectric layer and reducing compressive stress.


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