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PULSED BIAS CURRENT FOR GAIN SWITCHED SEMICONDUCTOR LASERS FOR AMPLIFIED SPONTANEOUS EMISSION REDUCT 检索报告

2023-07-22 1240 118K 0

专利信息

申请日期 2025-07-06 申请号 WOUS13076702
公开(公告)号 WO2014105653A3 公开(公告)日 2014-12-04
公开国别 WO 申请人省市代码 全国
申请人 NLIGHT PHOTONICS CORPORATION
简介 Gain switched laser diode pulses are used as seed pulses for optical pulse generation. ASE is reduced by applying a prebias to the laser diodes at an amplitude less than that associated with a laser diode threshold. An electrical seed pulse having an amplitude larger than that associated with laser threshold is applied within about 10-100 ns of the prebias pulse. The resulting laser diode pulse can be amplified in a pumped, rare earth doped optical fiber, with reduced ASE.


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