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R-T-B-BASED PERMANENT MAGNET 发明申请

2023-04-20 4480 70K 0

专利信息

申请日期 2025-09-12 申请号 JP2013092238
公开(公告)号 JP2014216463A 公开(公告)日 2014-11-17
公开国别 JP 申请人省市代码 全国
申请人 TDK CORP
简介 PROBLEM TO BE SOLVED : To provide a permanent magnet having excellent temperature characteristics, without lowering the magnetic characteristics significantly, compared with a conventional R-T-B-based permanent magnet. SOLUTION : In the structure of an R-T-B system, a laminate structure of an R1-T-B system crystal layer and a (Y, La)-T-B system crystal layer is formed by laminating R1-T-B and (Y, La)-T-B alternately, thus obtaining the improvement effect of temperature coefficient of the (Y, La)-T-B system crystal layer, while maintaining a high anisotropic magnetic field of the R1-T-B system crystal layer. Lattice strain of the whole laminate structure is relaxed by employing two elements of Y and La as the rare earth element of the (Y, La)-T-B system crystal layer, thus obtaining a high residual magnetic flux density. COPYRIGHT : (C)2015, JPO&INPIT


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